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| 2SK1951 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features * * * * * * Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter Avalanche ratings Outline TO-220FM D G 1 23 1. Gate 2. Drain 3. Source S 2SK1951 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 Symbol VDSS VGSS ID ID(pulse)* IDR IAP* 3 1 Ratings 60 20 25 100 25 25 Unit V V A A A A mJ W C C EAR* Tch 3 53 2 Pch* 30 150 -55 to +150 Tstg 2 2SK1951 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS IGSS VGS(off) Min 60 20 -- -- 1.0 -- -- Forward transfer admittance Input capacitance |yfs| Ciss 12 -- Typ -- -- -- -- -- 0.03 0.043 21 1450 Max -- -- 10 250 2.25 0.04 0.06 -- -- Unit V V A A V S pF Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 50 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 15 A 1 VGS = 10 V* ID = 15 A 1 VGS = 4 V* ID = 15 A 1 VDS = 10 V* VDS = 10 V VGS = 0 f = 1 MHz Zero gate voltage drain current IDSS Gate to source cutoff voltage Static drain to source on state RDS(on) resistance Output capacitance Reverse transfer capacitance Turn-on delay time Coss Crss td(on) -- -- -- 655 195 20 -- -- -- pF pF ns ID = 15 A VGS = 10 V RL = 2 Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test tr td(off) tf VDF trr -- -- -- -- -- 110 225 145 1.2 100 -- -- -- -- -- ns ns ns V ns IF = 25 A, VGS = 0 IF = 25 A, VGS = 0, diF / dt = 50 A / s See characteristics curves of 2SK1910 3 2SK1951 Power vs. Temperature Derating 60 Channel Dissipation Pch (W) 100 O ap by rea era R is tion DS lim in (o ite th n) d is Maximum Safe Operation Area 10 10 PW Drain Current I D (A) 30 10 3 1 0.3 0 s s 1 10 = m 40 s D C O pe m s (1 ra tio n Sh ot ) (T c 20 = 25 C ) Ta = 25C 0.3 1 3 10 30 100 0 50 100 150 0.1 0.1 Case Temperature Tc (C) Drain to Source Voltage VDS (V) Normalized Transient Thermal Impedance S (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 0.5 0.3 0.1 0.2 0.1 1.0 TC = 25C 0.05 0.02 0.01 1S h ch-c (t) = S (t) * ch-c ch-c = 3.57C/W, TC = 25C PDM ul ot P se 0.03 0.01 10 T 1m 10 m Pulse Width PW (s) 100 m PW 1 D = PW T 100 10 4 2SK1951 Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207 Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Strae 3 D-85622 Feldkirchen Munchen Tel: 089-9 91 80-0 Fax: 089-9 29 30 00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071 5 |
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